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Materials, technology and reliability for advanced interconnects--2005

symposium held March 28-April 1, 2005, San Francisco, California, U.S.A
  • 411 Pages
  • 3.52 MB
  • 6923 Downloads
  • English

Materials Research Society , Warrendale, Pa
Semiconductors -- Materials -- Congresses, Dielectric films -- Congresses, Integrated circuits -- Materials -- Congresses, Semiconductors -- Junctions -- Congresses, Integrated circuits -- Reliability -- Congr
Statementeditors, Paul R. Besser ... [et al.]
GenreCongresses
SeriesMaterials Research Society symposium proceedings -- v. 863, Materials Research Society symposia proceedings -- v. 863
ContributionsBesser, Paul R, Materials Research Society. Meeting Symposium B
Classifications
LC ClassificationsTK7871.85 .M345 2005
The Physical Object
Paginationxiii, 411 p. :
ID Numbers
Open LibraryOL22729375M
ISBN 101558998160

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Besides being the dominant diffusion path in Cu interconnect, the Cu/ dielectric cap interface was also reported to be the preferred void nucleation site (Meier et al.,Hau-Riege, ).This resulted in Cu interconnects exhibiting longer electromigration lifetimes in via-below interconnect configuration, than in via-above interconnect configuration (Gan et al.,Gan et al., Cited by: 2.

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Demand for off-chip bandwidth has continued to increase. It is projected by the Semiconductor Industry Association in their International Technology Roadmap for Semiconductors that by the yearthe chip-to-substrate area-array input-output interconnects will require a pitch of 80 by: 8.Download multilayer films or read online here in PDF or EPUB.

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